Dicing die bond film

ABSTRACT

The present invention provides a dicing die bond film in which peeling electrification hardly occurs and which has good tackiness and workability. The dicing die bond film of the present invention is a dicing die bond film including a dicing film and a thermosetting type die bond film provided thereon, wherein the thermosetting type die bond film contains conductive particles, the volume resistivity of the thermosetting type die bond film is 1×10 −6  Ω·cm or more and 1×10 −3  Ω·cm or less, and the tensile storage modulus of the thermosetting type die bond film at −20° C. before thermal curing is 0.1 to 10 GPa.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention also relates to a dicing die bond film.

2. Description of the Related Art

Conventionally, a dicing die bond film including a dicing film and athermosetting type die bond film laminated thereon is used in a processof manufacturing a semiconductor device (refer to Japanese PatentApplication Laid-Open No. 2008-218571, for example). In the process ofmanufacturing a semiconductor device using this dicing die bond film,first, a semiconductor wafer is pasted and fixed to the dicing die bondfilm, and dicing is performed in this state. With this operation, thesemiconductor wafer is processed into individual pieces having aprescribed size, which serves as semiconductor chips. Next, pickup of asemiconductor chip is performed to peel the semiconductor chip fixed tothe dicing die bond film from the dicing film.

In the pickup step, when the semiconductor chip with a die bond film ispeeled from the dicing film, peeling electrification occurs between thedie bond film and the dicing film. Because of that, there has been aproblem that a circuit on the semiconductor chip is broken by thegenerated static electricity.

Because of that, development of a die bond film has been desired, thathas functions such as tackiness and workability as in a conventional diebond film and also an antistatic function.

SUMMARY OF THE INVENTION

The present invention has been made in view of the above-describedproblems, and an object thereof is to provide a dicing die bond film inwhich peeling electrification hardly occurs and which has good tackinessand workability.

The present inventors investigated a dicing die bond film including adie bond film and a dicing film laminated thereon to solve theabove-described conventional problems. As a result, they found that thepeeling electrification hardly occurs and good tackiness and workabilityof the die bond film can be obtained by making the volume resistivity ofthe thermosetting type die bond film 1×10⁻⁶ Ω·cm or more and 1×10⁻³ Ω·cmor less by incorporating conductive particles into the thermosettingtype die bond film and by making the tensile storage modulus of thethermosetting type die bond film at −20° C. before thermal curing 0.1 to10 GPa, and completed the present invention.

The dicing die bond film according to the present invention is a dicingdie bond film including a dicing film and a thermosetting type die bondfilm provided thereon, and is characterized in that the thermosettingtype die bond film contains conductive particles, the volume resistivityof the thermosetting type die bond film is 1×10⁻⁶ Ω·cm or more and1×10⁻³ Ω·cm or less, and the tensile storage modulus of thethermosetting type die bond film at −20° C. before thermal curing is 0.1to 10 GPa.

According to the above-described configuration, because the volumeresistivity of the thermosetting type die bond film is 1×10⁻³ Ω·cm orless, a high antistatic effect can be exhibited. Therefore, breakage ofthe semiconductor chip due to peeling electrification during pickup canbe prevented, and electrification when the semiconductor chip with a diebond film is laminated on an adherend can be prevented. As a result,reliability as a device can be improved.

Because the tensile storage modulus of the thermosetting type die bondfilm at −20° C. before thermal curing is 10 GPa or less, good tackinessto the adherend and good workability can be obtained. Because thetensile storage modulus is 0.1 GPa or more and relatively high, stresscan be easily transferred during expansion.

The “volume resistivity” in the present invention is a value measured bya four-point probe method according to JIS K 7194.

In the above-described configuration, the conductive particles are twokinds or more of conductive particles having different average particlesizes, and each kind of the conductive particles preferably has anaverage particle size of 0.01 μm or more and 10 μm or less. By makingthe average particle size of the conductive particles 0.01 μm or more,wettability to the adherend can be secured and good tackiness can beexhibited. By making the average particle size of the conductiveparticles 10 μm or less, a better improvement effect on electricalconductivity and thermal conductivity due to the addition of theconductive particles can be obtained. Further, the thickness of thethermosetting type die bond film can be reduced, high integration can bemade possible, and generation of a chip crack caused by projection ofthe conductive particles from the thermosetting type die bond film canbe prevented. Further, by using two kinds of more of the conductiveparticles having different average particle sizes, the filling factorcan be easily improved.

In the above-described configuration, the content of the conductiveparticles is preferably 20 to 90 parts by weight relative to 100 partsby weight of an organic component of the thermosetting type die bondfilm. By making the content of the conductive particles 20 parts byweight or more, a decrease of the conductive function caused by a highvolume resistivity due to the formation of a conductive path can besuppressed. By making the content of the conductive particles 90 partsby weight or less, good toughness of the thermosetting type die bondfilm can be kept and generation of cracks and chipping during handlingof the thermosetting type die bond film can be prevented.

In the above-described configuration, a semiconductor chip with a diebond film is formed by forming a modified region on a semiconductorwafer by irradiating the semiconductor wafer with a laser beam, pastingthe semiconductor wafer to the dicing die bond film, and breaking thesemiconductor wafer at the modified region and simultaneously breakingthe thermosetting type die bond film that configures the dicing die bondfilm at a position that corresponds to the modified region by applying atensile force to the dicing die bond film. The obtained semiconductorchip with the die bond film is peeled from the dicing film. The peeledsemiconductor chip with the die bond film is preferably used in a methodof fixing the peeled semiconductor chip with the die bond film to anadherend with the die bond film interposed therebetween. Theabove-described method is a method by which generation of defects suchas chipping that occurs especially when the semiconductor wafer is thincan be reduced. The volume resistivity of the thermosetting type diebond film is 1×10⁻³ Ω·cm or less. Therefore, a high antistatic effectcan be exhibited even when the thermosetting type die bond film is usedin the above-described method. Because the tensile storage modulus ofthe thermosetting type die bond film at −20° C. before thermal curing is0.1 to 10 GPa, generation of chipping when the semiconductor wafer isbroken at the modified region can be prevented. Further, chip fly andpositional deviation of the semiconductor chip during pickup thereof canbe prevented.

In the above-described configuration, a semiconductor chip with a diebond film is formed by forming grooves on a surface of a semiconductorwafer, exposing the grooves by performing backside grinding, pasting thedicing die bond film to the surface of the semiconductor wafer where thegrooves are exposed, and breaking the thermosetting type die bond filmthat configures the dicing die bond film at a position that correspondsto the grooves by applying a tensile force to the dicing die bond film.The obtained semiconductor chip with the die bond film is peeled fromthe dicing film. The peeled semiconductor chip with the die bond film ispreferably used in a method of fixing the peeled semiconductor chip withthe die bond film to an adherend with the die bond film interposedtherebetween. The above-described method is a method by which generationof defects such as chipping that occurs especially when thesemiconductor wafer is thin can be reduced. The volume resistivity ofthe thermosetting type die bond film is 1×10⁻³ Ω·cm or less. Therefore,a high antistatic effect can be exhibited even when the thermosettingtype die bond film is used in the above-described method. Because thetensile storage modulus of the thermosetting type die bond film at −20°C. before thermal curing is 0.1 to 10 GPa, chip fly and positionaldeviation of the semiconductor chip during pickup thereof can beprevented.

In the above-described configuration, the conductive particles arepreferably of at least one kind selected from the group consisting ofnickel particles, copper particles, silver particles, aluminumparticles, carbon black, carbon nanotubes, metal particles obtained byplating a surface of a metal with another metal, and resin particles ofwhich surface is coated with a metal.

In the above-described configuration, the thermosetting type die bondfilm preferably contains an acrylic resin as a thermoplastic resin.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic sectional view showing a dicing die bond filmaccording to one embodiment of the present invention;

FIG. 2 is a schematic sectional view showing a dicing die bond filmaccording to another embodiment of the present invention;

FIG. 3 is a schematic sectional view for explaining one method ofmanufacturing a semiconductor device according to the presentembodiment;

FIG. 4 is a schematic sectional view for explaining the method ofmanufacturing a semiconductor device according to the presentembodiment;

FIGS. 5A and 5B are schematic sectional views for explaining the methodof manufacturing a semiconductor device according to the presentembodiment;

FIG. 6 is a schematic sectional view for explaining the method ofmanufacturing a semiconductor device according to the presentembodiment;

FIGS. 7A, 7B and 7C are schematic sectional views for explaining anothermethod of manufacturing a semiconductor device according to the presentembodiment;

FIG. 8 is a schematic sectional view for explaining the different methodof manufacturing a semiconductor device according to the presentembodiment; and

DESCRIPTION OF THE REFERENCE NUMERALS

-   1 base-   2 pressure-sensitive adhesive layer-   3, 3′ die bond film (thermosetting type die bond film)-   4 semiconductor wafer-   5 semiconductor chip-   6 adherend-   7 bonding wire-   8 sealing resin-   10, 12 dicing die bond film-   11 dicing film

DESCRIPTION OF THE EMBODIMENTS (Dicing Die Bond Film)

The dicing die bond film according to one embodiment of the presentinvention is explained below. FIG. 1 is a schematic sectional viewshowing a dicing die bond film according to one embodiment of thepresent invention. FIG. 2 is a schematic sectional view showing a dicingdie bond film according to another embodiment of the present invention.

As shown in FIG. 1, a dicing die bond film 10 has a constitution inwhich a die bond film 3 is layered on a dicing film 11. The dicing film11 is constituted by layering a pressure-sensitive adhesive layer 2 on abase material 1, and the die bond film 3 is provided on the adhesivelayer 2. As shown in FIG. 2, the present invention may have aconstitution such that a die bond film 3′ is formed only at the portionto which workpieces are laminated.

The base 1 has ultraviolet transparency and is a base body for strengthof dicing die bond films 10 and 12. Examples thereof include polyolefinsuch as low-density polyethylene, straight chain polyethylene,intermediate-density polyethylene, high-density polyethylene, verylow-density polyethylene, random copolymer polypropylene, blockcopolymer polypropylene, homopolypropylene, polybutene, andpolymethylpentene; an ethylene-vinylacetate copolymer; an ionomer resin;an ethylene (meth)acrylic acid copolymer; an ethylene (meth)acrylic acidester (random or alternating) copolymer; an ethylene-butene copolymer;an ethylene-hexene copolymer; polyurethane; polyester such aspolyethyleneterephthalate and polyethylenenaphthalate; polycarbonate;polyetheretherketone; polyimide; polyetherimide; polyamide; wholearomatic polyamides; polyphenylsulfide; aramid (paper); glass; glasscloth; a fluorine resin; polyvinyl chloride; polyvinylidene chloride; acellulose resin; a silicone resin; metal (foil); and paper.

Further, the material of the base material 1 includes a polymer such asa cross-linked body of the above resins. The above plastic film may bealso used unstretched, or may be also used on which a monoaxial or abiaxial stretching treatment is performed depending on necessity.According to resin sheets in which heat shrinkable properties are givenby the stretching treatment, etc., the adhesive area of thepressure-sensitive adhesive layer 2 and the die bond films 3, 3′ isreduced by thermally shrinking the base material 1 after dicing, and therecovery of the semiconductor chips (a semiconductor element) can befacilitated.

A known surface treatment such as a chemical or physical treatment suchas a chromate treatment, ozone exposure, flame exposure, high voltageelectric exposure, and an ionized ultraviolet treatment, and a coatingtreatment by an undercoating agent (for example, a tacky substancedescribed later) can be performed on the surface of the base material 1in order to improve adhesiveness, holding properties, etc. with theadjacent layer. The same type or different type of base material can beappropriately selected and used as the base material 1, and a basematerial in which a plurality of types are blended can be used dependingon necessity.

The thickness of the base material 1 can be appropriately decidedwithout limitation particularly. However, it is generally about 5 to 200μm.

The pressure-sensitive adhesive used in the formation of apressure-sensitive adhesive layer 2 is not especially limited, andexamples thereof include general pressure-sensitive adhesives such as anacrylic pressure-sensitive adhesive and a rubber pressure-sensitiveadhesive. The pressure-sensitive adhesive is preferably an acrylicpressure-sensitive adhesive containing an acrylic polymer as a basepolymer in view of clean washing of electronic components such as asemiconductor wafer and glass, which are easily damaged bycontamination, with ultrapure water or an organic solvent such asalcohol.

Specific examples of the acryl polymers include an acryl polymer inwhich acrylate is used as a main monomer component. Examples of theacrylate include alkyl acrylate (for example, a straight chain orbranched chain alkyl ester having 1 to 30 carbon atoms, and particularly4 to 18 carbon atoms in the alkyl group such as methylester, ethylester,propylester, isopropylester, butylester, isobutylester, sec-butylester,t-butylester, pentylester, isopentylester, hexylester, heptylester,octylester, 2-ethylhexylester, isooctylester, nonylester, decylester,isodecylester, undecylester, dodecylester, tridecylester,tetradecylester, hexadecylester, octadecylester, and eicosylester) andcycloalkyl acrylate (for example, cyclopentylester, cyclohexylester,etc.). These monomers may be used alone or two or more types may be usedin combination. All of the words including “(meth)” in connection withthe present invention have an equivalent meaning.

The acrylic polymer may optionally contain a unit corresponding to adifferent monomer component copolymerizable with the above-mentionedalkyl ester of (meth)acrylic acid or cycloalkyl ester thereof in orderto improve the cohesive force, heat resistance or some other property ofthe polymer. Examples of such a monomer component includecarboxyl-containing monomers such as acrylic acid, methacrylic acid,carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconicacid, maleic acid, fumaric acid, and crotonic acid; acid anhydridemonomers such as maleic anhydride, and itaconic anhydride;hydroxyl-containing monomers such as 2-hydroxyethyl (meth)acrylate,2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate,6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate,10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, and(4-hydroxylmethylcyclohexyl)methyl (meth)acrylate; sulfonic acid groupcontaining monomers such as styrenesulfonic acid, allylsulfonic acid,2-(meth)acrylamide-2-methylpropanesulfonic acid,(meth)acrylamidepropanesulfonic acid, sulfopropyl (meth)acrylate, and(meth)acryloyloxynaphthalenesulfonic acid; phosphoric acid groupcontaining monomers such as 2-hydroxyethylacryloyl phosphate;acrylamide; and acrylonitrile. These copolymerizable monomer componentsmay be used alone or in combination of two or more thereof. The amountof the copolymerizable monomer (s) to be used is preferably 40% or lessby weight of all the monomer components.

For crosslinking, the acrylic polymer can also contain multifunctionalmonomers if necessary as the copolymerizable monomer component. Suchmultifunctional monomers include hexane dioldi(meth)acrylate,(poly)ethyleneglycoldi(meth)acrylate, (poly)propylene glycoldi(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritoldi(meth)acrylate, trimethylol propane tri(meth)acrylate, pentaerythritoltri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, epoxy(meth)acrylate, polyester (meth)acrylate, urethane (meth)acrylate etc.These multifunctional monomers can also be used as a mixture of one ormore thereof. From the viewpoint of adhesiveness etc., the use amount ofthe multifunctional monomer is preferably 30 wt % or less based on thewhole monomer components.

Preparation of the Above Acryl Polymer can be Performed by applying anappropriate manner such as a solution polymerization manner, an emulsionpolymerization manner, a bulk polymerization manner, and a suspensionpolymerization manner to a mixture of one or two or more kinds ofcomponent monomers for example. Since the pressure-sensitive adhesivelayer preferably has a composition in which the content of low molecularweight materials is suppressed from the viewpoint of prevention of wafercontamination, and since those in which an acryl polymer having a weightaverage molecular weight of 300000 or more, particularly 400000 to30000000 is as a main component are preferable from such viewpoint, thepressure-sensitive adhesive can be made to be an appropriatecross-linking type with an internal cross-linking manner, an externalcross-linking manner, etc.

To increase the number-average molecular weight of the base polymer suchas acrylic polymer etc., an external crosslinking agent can be suitablyadopted in the pressure-sensitive adhesive. The external crosslinkingmethod is specifically a reaction method that involves adding andreacting a crosslinking agent such as a polyisocyanate compound, epoxycompound, aziridine compound, melamine crosslinking agent, urea resin,anhydrous compound, polyamine, carboxyl group-containing polymer. Whenthe external crosslinking agent is used, the amount of the crosslinkingagent to be used is determined suitably depending on balance with thebase polymer to be crosslinked and applications thereof as thepressure-sensitive adhesive. Generally, the crosslinking agent ispreferably incorporated in an amount of about 5 parts by weight or lessbased on 100 parts by weight of the base polymer. The lower limit of thecrosslinking agent is preferably 0.1 parts by weight or more. Thepressure-sensitive adhesive may be blended not only with the componentsdescribed above but also with a wide variety of conventionally knownadditives such as a tackifier, and aging inhibitor, if necessary.

The pressure-sensitive adhesive layer 2 can be formed with a radiationcuring-type pressure-sensitive adhesive. The radiation curing-typepressure-sensitive adhesive can easily decrease its adhesive power byincreasing the degree of crosslinking by irradiation with radiation suchas an ultraviolet ray, and by irradiating only a portion 2 a thatcorresponds to a workpiece pasting portion of the pressure-sensitiveadhesive layer 2 shown in FIG. 2 with radiation, a difference inadhesive power from that of a different portion 2 b can be provided.

Further, by curing the radiation curing-type pressure-sensitive adhesivelayer 2 with the die bond film 3′ shown in FIG. 2, the part 2 a in whichthe adhesive strength is remarkably decreased can be formed easily.Because the die bond film 3′ is pasted to the part 2 a in which theadhesive strength is decreased by curing, the interface of the part 2 aof the pressure-sensitive adhesive layer 2 and the die bond film 3′ hasa characteristic of being easily peeled during pickup. On the otherhand, the part not radiated by radiation has sufficient adhesivestrength, and forms the part 2 b.

As described above, in the pressure-sensitive adhesive layer 2 of thedicing die bond film 10 shown in FIG. 1, the part 2 b formed by anon-cured radiation curing-type pressure-sensitive adhesive sticks tothe die bond film 3, and the holding force when dicing can be secured.In such a manner, the radiation curing-type pressure-sensitive adhesivecan support the die bond film 3 for fixing a chip-shaped workpiece suchas a semiconductor chip to an adherend such as a substrate with a goodbalance between adhesion and peeling. In the pressure-sensitive adhesivelayer 2 of the dicing die bond film 11 shown in FIG. 2, a dicing ringcan be fixed to the part 2 b.

The radiation curing-type pressure-sensitive adhesive that is used has aradiation curable functional group of a radical reactive carbon-carbondouble bond, etc., and adherability. Examples of the radiationcuring-type pressure-sensitive adhesive are an added type radiationcuring-type pressure-sensitive adhesive in which a radiation curablemonomer component or an oligomer component is compounded into an acrylpressure sensitive adhesive or a rubber pressure sensitive adhesive.

Examples of the radiation curable monomer component to be compoundedinclude such as an urethane oligomer, urethane(meth)acrylate,trimethylolpropane tri(meth)acrylate, tetramethylolmethanetetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritoltetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate,dipentaerythritol hexa(meth)acrylate, and 1,4-butanedioldi(meth)acrylate. Further, the radiation curable oligomer componentincludes various types of oligomers such as an urethane based, apolyether based, a polyester based, a polycarbonate based, and apolybutadiene based oligomer, and its molecular weight is appropriatelyin a range of about 100 to 30,000. The compounding amount of theradiation curable monomer component and the oligomer component can beappropriately determined to an amount in which the adhesive strength ofthe pressure-sensitive adhesive layer can be decreased depending on thetype of the pressure-sensitive adhesive layer. Generally, it is forexample 5 to 500 parts by weight, and preferably about 40 to 150 partsby weight based on 100 parts by weight of the base polymer such as anacryl polymer constituting the pressure sensitive adhesive.

Further, besides the added type radiation curing-type pressure-sensitiveadhesive described above, the radiation curing-type pressure-sensitiveadhesive includes an internal radiation curing-type pressure-sensitiveadhesive using an acryl polymer having a radical reactive carbon-carbondouble bond in the polymer side chain, in the main chain, or at the endof the main chain as the base polymer. The internal radiationcuring-type pressure-sensitive adhesives of an internally provided typeare preferable because they do not have to contain the oligomercomponent, etc. that is a low molecular weight component, or most ofthem do not contain, they can form a pressure-sensitive adhesive layerhaving a stable layer structure without migrating the oligomercomponent, etc. in the pressure sensitive adhesive over time.

The above-mentioned base polymer, which has a carbon-carbon double bond,may be any polymer that has a carbon-carbon double bond and further hasviscosity. As such a base polymer, a polymer having an acrylic polymeras a basic skeleton is preferable. Examples of the basic skeleton of theacrylic polymer include the acrylic polymers exemplified above.

The method for introducing a carbon-carbon double bond into any one ofthe above-mentioned acrylic polymers is not particularly limited, andmay be selected from various methods. The introduction of thecarbon-carbon double bond into a side chain of the polymer is easier inmolecule design. The method is, for example, a method of copolymerizinga monomer having a functional group with an acrylic polymer, and thencausing the resultant to condensation-react or addition-react with acompound having a functional group reactive with the above-mentionedfunctional group and a carbon-carbon double bond while keeping theradial ray curability of the carbon-carbon double bond.

Examples of the combination of these functional groups include acarboxylic acid group and an epoxy group; a carboxylic acid group and anaziridine group; and a hydroxyl group and an isocyanate group. Of thesecombinations, the combination of a hydroxyl group and an isocyanategroup is preferable from the viewpoint of the easiness of reactiontracing. If the above-mentioned acrylic polymer, which has acarbon-carbon double bond, can be produced by the combination of thesefunctional groups, each of the functional groups may be present on anyone of the acrylic polymer and the above-mentioned compound. It ispreferable for the above-mentioned preferable combination that theacrylic polymer has the hydroxyl group and the above-mentioned compoundhas the isocyanate group. Examples of the isocyanate compound in thiscase, which has a carbon-carbon double bond, include methacryloylisocyanate, 2-methacryloyloxyethyl isocyanate, andm-isopropenyl-α,α-dimethylbenzyl isocyanate. The used acrylic polymermay be an acrylic polymer copolymerized with anyone of thehydroxyl-containing monomers exemplified above, or an ether compoundsuch as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether ordiethylene glycol monovinyl ether.

The internal radiation curing-type pressure-sensitive adhesive may bemade only of the above-mentioned base polymer (in particular, theacrylic polymer), which has a carbon-carbon double bond. However, theabove-mentioned radiation curable monomer component or oligomercomponent may be incorporated into the base polymer to such an extentthat properties of the adhesive are not deteriorated. The amount of theradiation curable oligomer component or the like is usually 30 parts orless by weight, preferably from 0 to 10 parts by weight for 100 parts byweight of the base polymer.

In the case that the radiation curable adhesive is cured withultraviolet or the like, a photopolymerization initiator is incorporatedinto the adhesive. Examples of the photopolymerization initiator includeα-ketol compounds such as4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone,α-hydroxy-α,α′-dimethylacetophenone, 2-methyl-2-hydroxypropiophenone,and 1-hydroxycyclohexyl phenyl ketone; acetophenone compounds such asmethoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone,2,2-diethoxyacetophenone, and2-methyl-1-[4-(methylthio)-phenyl]-2-morpholinopropane-1; benzoin ethercompounds such as benzoin ethyl ether, benzoin isopropyl ether, andanisoin methyl ether; ketal compounds such as benzyl dimethyl ketal;aromatic sulfonyl chloride compounds such as 2-naphthalenesulfonylchloride; optically active oxime compounds such as1-phenone-1,1-propanedione-2-(o-ethoxycarbonyl)oxime; benzophenonecompounds such as benzophenone, benzoylbenzoic acid, and3,3′-dimethyl-4-methoxybenzophenone; thioxanthone compound such asthioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone,2,4-dimethylthioxanthone, isopropylthioxanthone,2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, and2,4-diisopropylthioxanthone; camphorquinone; halogenated ketones;acylphosphonoxides; and acylphosphonates. The amount of thephotopolymerization initiator to be blended is, for example, from about0.05 to 20 parts by weight for 100 parts by weight of the acrylicpolymer or the like which constitutes the adhesive as a base polymer.

Further, examples of the radiation curing-type pressure-sensitiveadhesive which is used in the formation of the pressure-sensitiveadhesive layer 2 include such as a rubber pressure-sensitive adhesive oran acryl pressure-sensitive adhesive which contains anaddition-polymerizable compound having two or more unsaturated bonds, aphotopolymerizable compound such as alkoxysilane having an epoxy group,and a photopolymerization initiator such as a carbonyl compound, anorganic sulfur compound, a peroxide, an amine, and an onium saltcompound, which are disclosed in JP-A No. 60-196956. Examples of theabove addition-polymerizable compound having two or more unsaturatedbonds include such as polyvalent alcohol ester or oligoester of acrylacid or methacrylic acid and an epoxy or a urethane compound.

The radiation curing-type pressure-sensitive adhesive layer 2 cancontain a compound that colors by irradiation with a radiation asnecessary. By containing the compound that colors by irradiation with aradiation in the pressure-sensitive adhesive layer 2, only the portionirradiated with a radiation can be colored. The portion 2 a thatcorresponds to a workpiece pasting portion 3 a shown in FIG. 1 can becolored. Accordingly, whether the pressure-sensitive adhesive layer 2 isirradiated with a radiation or not can be visually determinedimmediately, and the workpiece pasting portion 3 a can be recognizedeasily, and the pasting of the workpiece is easy. Further, whendetecting a semiconductor chip with a photosensor or the like, thedetection accuracy improves, and no incorrect operation occurs duringpickup of the semiconductor chip.

The compound that colors by irradiation with a radiation is colorless orhas a pale color before the irradiation with a radiation. However, it iscolored by irradiation with a radiation. A preferred specific example ofthe compound is a leuco dye. Common leuco dyes such as triphenylmethane,fluoran, phenothiazine, auramine, and spiropyran can be preferably used.Specific examples thereof include 3-[N-(p-tolylamino)]-7-anilinofluoran,3-[N-(p-tolyl)-N-methylamino]-7-anilinofluoran,3-[N-(p-tolyl)-N-ethylamino]-7-anilinofluoran,3-diethylamino-6-methyl-7-anilinofluoran, crystal violet lactone,4,4′,4″-trisdimethylaminotriphenylmethanol, and4,4′,4″-trisdimethylaminotriphenylmethane.

Examples of a developer that is preferably used with these leuco dyesinclude a prepolymer of a conventionally known phenolformalin resin, anaromatic carboxylic acid derivative, and an electron acceptor such asactivated white earth, and various publicly known color developers canbe used in combination for changing the color tone.

The compound that colors by irradiation with a radiation may be includedin the radiation curing-type pressure-sensitive adhesive after it isdissolved in an organic solvent or the like, or may be included in thepressure-sensitive adhesive in the form of a fine powder. The ratio ofuse of this compound is 10% by weight or less, preferably 0.01 to 10% byweight, and more preferably 0.5 to 5% by weight in thepressure-sensitive adhesive layer 2. When the ratio of the compoundexceeds 10% by weight, the curing of the portion 2 a of thepressure-sensitive adhesive layer 2 becomes insufficient because theradiation that is radiated onto the pressure-sensitive adhesive layer 2is absorbed too much by this compound, and the adhesive power may notdecrease sufficiently. On the other hand, the ratio of the compound ispreferably 0.01% by weight or more to color the compound sufficiently.

When the pressure-sensitive adhesive layer 2 is formed with theradiation curing-type pressure-sensitive adhesive, a portion of thepressure-sensitive adhesive layer 2 may be irradiated with radiation sothat the adhesive power of the portion 2 a of the pressure-sensitiveadhesive layer 2 becomes smaller than the adhesive power of thedifferent portion 2 b.

An example of the method of forming the portion 2 a on thepressure-sensitive adhesive layer 2 is a method of forming the radiationcuring-type pressure-sensitive adhesive layer 2 on the support base 1and then curing the radiation curing-type pressure-sensitive adhesivelayer 2 by partially irradiating the portion 2 a with radiation. Thepartial irradiation with radiation can be performed through a photo maskin which a pattern is formed corresponding to the portion 3 b or thelike other than the workpiece pasting portion 3 a. Another example is amethod of curing the radiation curing-type pressure-sensitive adhesivelayer 2 by spot irradiation with an ultraviolet ray. The radiationcuring-type pressure-sensitive adhesive layer 2 can be formed bytransferring a layer provided on a separator onto the support base 1.The partial curing with radiation can also be performed on the radiationcuring-type pressure-sensitive adhesive layer 2 provided on theseparator.

When the pressure-sensitive adhesive layer 2 is formed with a radiationcuring-type pressure-sensitive adhesive, the portion 2 a in which theadhesive power is decreased can be formed by using the support base 1 inwhich the entirety or a part of a portion other than the portion thatcorresponds to the workpiece pasting portion 3 a of at least one side ofthe support base 1 is shielded, forming the radiation curing-typepressure-sensitive adhesive layer 2 on this support base 1 to cure theportion that corresponds to the workpiece pasting portion 3 a byirradiation with radiation. The shielding material that can serve as aphoto mask on a support film can be produced by printing, vapordeposition, or the like. According to such a manufacturing method, thedicing die bond film 10 of the present invention can be manufacturedefficiently.

When curing hindrance by oxygen occurs during irradiation withradiation, it is desirable to block oxygen (air) from the surface of theradiation curing-type pressure-sensitive adhesive layer 2 by somemethod. Examples of the method include a method of covering the surfaceof the pressure-sensitive adhesive layer 2 with a separator and a methodof performing irradiation with an ultraviolet ray in a nitrogen gasatmosphere.

The thickness of the pressure-sensitive adhesive layer 2 is notparticularly limited. However, it is preferably about 1 to 50 μm fromthe viewpoint of preventing chipping of the chip cut surface,compatibility of fixing and holding of the adhesive layer, and the like.It is preferably 2 to 30 μm, and further preferably 5 to 25 μam.

Conductive particles are contained in the die bond films 3 and 3′. Theconductive particles are preferably of at least one kind selected fromthe group consisting of nickel particles, copper particles, silverparticles, aluminum particles, carbon black, carbon nanotubes, metalparticles obtained by plating a surface of a metal with another metal,and resin particles of which surface is coated with a metal.

The metal particles obtained by plating a surface of a metal withanother metal are not especially limited. For example, it is possible touse particles obtained by coating nickel particles or copper particlesas a core with a noble metal such as gold or silver. The resin particlesof which surface is coated with a metal are not especially limited. Forexample, it is possible to use particles obtained by platingnon-conductive particles of a resin, an inorganic compound, or the likewith a metal such as nickel or gold.

The shape of the conductive particles is not especially limited, andexamples thereof include a flake shape, a needle shape, a filamentshape, a spherical shape, and a scale shape. However, a spherical shapeis preferable in view of improving dispersibility and filling factor.

The average particle size of the conductive particles is preferably 0.01μm or more and 10 μm or less, and more preferably 0.1 μm or more and 10μm or less. By making the average particle size of the conductiveparticles 0.01 μm or more, wettability to the adherend can be securedand good tackiness can be exhibited, and by making the average particlesize 10 μm or less, a better improvement effect on electricalconductivity and thermal conductivity due to the addition of theconductive particles can be obtained. The average particle size of theconductive particles is a value obtained by an optical particle sizedistribution meter (device name: LA-910 manufactured by HORIBA, Ltd.),for example.

The conductive particles are preferably two kinds or more of particleshaving different average particle sizes. By using two kinds or more ofparticles having different particle sizes, the filling factor can beeasily improved. When two kinds or more of conductive particles havingdifferent average particle sizes are incorporated, a system ispreferable in which conductive particles A having an average particlesize of 0.01 μm or more and less than 5 μam and conductive particles Bhaving an average particle size of 1 μm or more and 10 μm or less aremixed together. In this case, the mixing ratio of conductive particles Ato conductive particles B is preferably 1:9 to 4:6 in a weight ratio.

The content of the conductive particles is preferably 20 to 90 parts byweight and more preferably 40 to 90 parts by weight relative to 100parts by weight of an organic component of the die bond films 3 and 3′.By making the content of the conductive particles 20 parts by weight ormore, a decrease of the conductive function caused by a high volumeresistivity due to the formation of a conductive path can be suppressed.By making the content of the conductive particles 90 parts by weight orless, good toughness of the thermosetting type die bond film can be keptand generation of cracks and chipping during handling of thethermosetting type die bond film can be prevented.

The volume resistivity of the die bond films 3 and 3′ is 1×10⁻⁶ Ω·m ormore and 1×10⁻³ Ω·cm or less. The volume resistivity is preferably1×10⁻⁶ Ω·cm or more and 1×10⁻⁵ Ω·cm or less, and more preferably 1×10⁻⁶Ω·cm or more and 1×10⁻⁴ Ω·cm or less. Because the volume resistivity ofthe thermosetting type die bond films 3 and 3′ is 1×10⁻³ Ω·cm or less, ahigh antistatic effect can be exhibited. As a result, breakage of thesemiconductor chip due to peeling electrification during pickup can beprevented, and reliability as a device can be improved.

The tensile storage modulus of the die bond films 3 and 3′ at −20° C.before thermal curing is 0.1 to 10 GPa, preferably 1 to 10 GPa, and morepreferably 4 to 10 GPa. Because the tensile storage modulus of the diebond films 3 and 3′ at −20° C. before thermal curing is 10 GPa or less,good tackiness to the adherend and good workability can be obtained.Because the tensile storage modulus is 0.1 GPa or more and relativelyhigh, stress can be easily transferred during expansion, and thesemiconductor chips adjacent to each other can be broken successfully.

The tensile storage modulus of the die bond films 3 and 3′ at 175° C.after thermal curing by heating is preferably 0.01 to 50 MPa, and morepreferably 0.1 to 50 MPa. By making the tensile storage modulus at 175°C. after thermal curing by heating 0.01 to 50 MPa, generation of sheardeformation at the adhering surface of the die bond films 3 and 3′ withthe adherend due to ultrasonic vibration and heating can be preventedeven in a wire bonding step. As a result, the success rate of wirebonding can be improved. The heating condition at thermal curing of thedie bond films 3 and 3′ is described in detail in the latter part.

The 90° peeling adhesive power of the die bond films 3 and 3′ beforethermal curing to the pressure-sensitive adhesive layer 2 is preferably0.03 to 0.25 N/25 mm tape width, and more preferably 0.04 to 0.15 N/25mm tape width. The conditions for measuring the peeling adhesive powerare a tensile speed of 300 mm/min, a pasting temperature of 40° C., anda peeling temperature of 25° C. (room temperature).

The lamination structure of the die bond films 3 and 3′ are notespecially limited, and examples thereof include a single layerstructure of an adhesive layer and a multi-layered structure in which anadhesive layer is formed on one side or both sides of a core member.Examples of the core member include films (such as polyimide film,polyester film, polyethylene terephthalate film, polyethylenenaphthalate film, and polycarbonate film); resin substrates which arereinforced with glass fiber or plastic nonwoven finer; siliconsubstrates; and glass substrates.

The adhesive composition constituting the die bond films 3, 3′ includethose in which a thermoplastic resin is used in combination with athermosetting resin.

Examples of the above-mentioned thermosetting resin include phenolresin, amino resin, unsaturated polyester resin, epoxy resin,polyurethane resin, silicone resin, and thermosetting polyimide resin.These resins may be used alone or in combination of two or more thereof.Particularly preferable is epoxy resin, which contains ionic impuritieswhich corrode semiconductor elements in only a small amount. As thecuring agent of the epoxy resin, phenol resin is preferable.

The epoxy resin may be any epoxy resin that is ordinarily used as anadhesive composition. Examples thereof include bifunctional orpolyfunctional epoxy resins such as bisphenol A type, bisphenol F type,bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol Atype, bisphenol AF type, biphenyl type, naphthalene type, fluorene type,phenol Novolak type, orthocresol Novolak type, tris-hydroxyphenylmethanetype, and tetraphenylolethane type epoxy resins; hydantoin type epoxyresins; tris-glycicylisocyanurate type epoxy resins; and glycidylaminetype epoxy resins. These may be used alone or in combination of two ormore thereof. Among these epoxy resins, particularly preferable areNovolak type epoxy resin, biphenyl type epoxy resin,tris-hydroxyphenylmethane type epoxy resin, and tetraphenylolethane typeepoxy resin, since these epoxy resins are rich in reactivity with phenolresin as an agent for curing the epoxy resin and are superior in heatresistance and so on.

The phenol resin is a resin acting as a curing agent for the epoxyresin. Examples thereof include Novolak type phenol resins such asphenol Novolak resin, phenol aralkyl resin, cresol Novolak resin,tert-butylphenol Novolak resin and nonylphenol Novolak resin; resol typephenol resins; and polyoxystyrenes such as poly(p-oxystyrene). These maybe used alone or in combination of two or more thereof. Among thesephenol resins, phenol Novolak resin and phenol aralkyl resin areparticularly preferable, since the connection reliability of thesemiconductor device can be improved.

About the blend ratio between the epoxy resin and the phenol resin, forexample, the phenol resin is blended with the epoxy resin in such amanner that the hydroxyl groups in the phenol resin is preferably from0.5 to 2.0 equivalents, more preferably from 0.8 to 1.2 equivalents perequivalent of the epoxy groups in the epoxy resin component. If theblend ratio between the two is out of the range, curing reactiontherebetween does not advance sufficiently so that properties of thecured epoxy resin easily deteriorate.

Examples of the thermoplastic resin include a natural rubber, a butylrubber, an isoprene rubber, a chloroprene rubber, and ethylene-vinylacetate copolymer, an ethylene-acrylic acid copolymer, anethylene-acrylic ester copolymer, a polybutadiene resin, a polycarbonateresin, a thermoplastic polyimide resin, a polyamide resin such as6-nylon or 6,6-nylon, a phenoxy resin, an acrylic resin, a saturatedpolyester resin such as PET or PBT, a polyamideimide resin, and afluororesin. These thermoplastic resins can be used alone or two typesor more can be used together. Among these thermoplastic resins, anacrylic resin is especially preferable because it has a small amount ofionic impurities, high heat resistance, and can secure reliability of asemiconductor element.

The acrylic resin is not especially limited, and examples thereofinclude a polymer (an acrylic copolymer) that is constituted from onetype or two types or more of acrylic acid ester or methacrylic acidesters having linear or branched alkyl groups having 30 or less carbonatoms, especially 4 to 18 carbon atoms. Examples of the alkyl groupinclude a methyl group, an ethyl group, a propyl group, an isopropylgroup, an n-butyl group, a t-butyl group, an isobutyl group, an amylgroup, an isoamyl group, a hexyl group, a heptyl group, a cyclohexylgroup, a 2-ethylhexyl group, an octyl group, an isooctyl group, a nonylgroup, an isononyl group, a decyl group, an isodecyl group, an undecylgroup, a lauryl group, a tridecyl group, a tetradecyl group, a stearylgroup, an octadecyl group, and a dodecyl group.

Other monomers that form the polymer are not especially limited, andexamples thereof include carboxyl group-containing monomers such asacrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentylacrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid,acid anhydride monomers such as maleic anhydride and itaconic anhydride,hydroxyl group-containing monomers such as 2-hydroxyethyl(meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl(meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl(meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl(meth)acrylate, and (4-hydroxymethylcyclohexyl)-methylacrylate, sulfonicacid group-containing monomers such as styrene sulfonate, allylsulfonate, 2-(meth)acrylamide-2-methylpropane sulfonic acid,(meth)acrylamidepropane sulfonic acid, sulfopropyl(meth)acrylate, and(meth)acryloyloxynaphthalene sulfonic acid, and phosphategroup-containing monomers such as 2-hydroyethylacryloyl phosphate.

The mixing ratio of the thermosetting resin is not especially limited aslong as it is a ratio at which a thermosetting function of the die bondfilms 3 and 3′ can be exhibited when the films are heated underpredetermined conditions. However, it is preferably 5 to 60% by weightand more preferably 10 to 50% by weight.

In order to crosslink the die bond film 3, 3′ of the present inventionto some extent in advance, it is preferable to add, as a crosslinkingagent, a polyfunctional compound which reacts with functional groups ofmolecular chain terminals of the above-mentioned polymer to thematerials used when the sheet 12 is produced. In this way, the adhesiveproperty of the sheet at high temperatures is improved so as to improvethe heat resistance.

The crosslinking agent may be one known in the prior art. Particularlypreferable are polyisocyanate compounds, such as tolylene diisocyanate,diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalenediisocyanate, and adducts of polyhydric alcohol and diisocyanate. Theamount of the crosslinking agent to be added is preferably set to 0.05to 7 parts by weight for 100 parts by weight of the above-mentionedpolymer. If the amount of the crosslinking agent to be added is morethan 7 parts by weight, the adhesive force is unfavorably lowered. Onthe other hand, if the adding amount is less than 0.05 part by weight,the cohesive force is unfavorably insufficient. A differentpolyfunctional compound, such as an epoxy resin, together with thepolyisocyanate compound may be incorporated if necessary.

Fillers other than the conductive particles can be appropriatelycompounded in the die bond films 3 and 3′ according to the intended use.The compounding of the filler enables adjustment of the modulus, and thelike. Examples of the fillers include inorganic fillers and organicfillers. Examples of the filler include an inorganic filler and anorganic filler. However, an inorganic filler is preferable from theviewpoint of improving handling property, improving thermalconductivity, adjusting melt viscosity, and giving thixotropy. Theinorganic filler is not especially limited, and examples thereof includealuminum hydroxide, magnesium hydroxide, calcium carbonate, magnesiumcarbonate, calcium silicate, magnesium silicate, calcium oxide,magnesium oxide, aluminum oxide, aluminum nitride, aluminum boratewhiskers, boron nitride, crystalline silica, and amorphous silica. Thesecan be used alone or two types or more can be used together.

Additives other than the conductive particles and the fillers can beappropriately compounded in the die bond films 3 and 3′ as necessary.Examples thereof include a flame retardant, a silane coupling agent, andan ion trapping agent. Examples of the flame retardant include antimonytrioxide, antimony pentaoxide, and brominated epoxy resin. These may beused alone or in combination of two or more thereof. Examples of thesilane coupling agent includeβ-(3,4-epoxycyclohexyl)ethyltrimethoxysilane,γ-glycidoxypropyltrimethoxysilane, andγ-glycidoxypropylmethyldiethoxysilane. These may be used alone or incombination of two or more thereof. Examples of the ion trapping agentinclude hydrotalcite and bismuth hydroxide. These may be used alone orin combination of two or more thereof.

The thickness (total thickness in the case of a laminated body) of thedie bond films 3 and 3′ is not especially limited. However, it ispreferably 5 to 100 μm, more preferably 5 to 60 μm, and furtherpreferably 5 to 30 μm from the viewpoint of compatibility of crackingprevention of the chip cut surface and fixing and holding by theadhesive layer.

The dicing die bond films 10 and 12 can have the antistatic functionalso to the base 1 and to the pressure-sensitive adhesive layer forpreventing generation of static electricity at adhesion, peeling, andthe like, and for preventing breakage of a circuit due toelectrification of a semiconductor wafer, or the like caused by staticelectricity. The antistatic function can be given by an appropriatemethod such as a method of adding an antistatic agent or a conductivesubstance to the base 1 or the pressure-sensitive adhesive layer 2 or amethod of providing a conductive layer made of a charge transfercomplex, a metal film, or the like to the base 1. A method is preferablewith which impurity ions that have a possibility of deteriorating thesemiconductor wafer hardly generate. Examples of the conductivesubstance (conductive filler) compounded for the purpose of givingconductivity or improving thermal conductivity include a spherical,needle-shaped, or flake-shaped metal powder of silver, aluminum, gold,copper, nickel, a conductive alloy, or the like, a metal oxide such asalumina, amorphous carbon black, and graphite.

The die bond films 3, 3′ of the dicing die bond films 10, 12 arepreferably protected by a separator (not shown). The separator has afunction as a protecting material that protects the die bond films 3, 3′until they are practically used. Further, the separator can be used as asupporting base material when transferring the die bond films 3, 3′ tothe pressure-sensitive adhesive layer 2. The separator is peeled whenpasting a workpiece onto the die bond films 3, 3′ of the dicing die bondfilm. Polyethylenetelephthalate (PET), polyethylene, polypropylene, aplastic film, a paper, etc. whose surface is coated with a peeling agentsuch as a fluorine based peeling agent and a long chain alkylacrylatebased peeling agent can be also used as the separator.

The dicing die bond films 10, 11 according to the present embodiment areproduced, for example, by the following procedure. First, the basematerial 1 can be formed by a conventionally known film-forming method.The film-forming method includes, for example, a calendar film-formingmethod, a casting method in an organic solvent, an inflation extrusionmethod in a closed system, a T-die extrusion method, a co-extrusionmethod, and a dry lamination method.

Next, a pressure-sensitive adhesive composition solution is applied onthe base material 1 to form a coated film and the coated film is driedunder predetermined conditions (optionally crosslinked with heating) toform the pressure-sensitive adhesive layer 2. Examples of theapplication method include, but are not limited to, roll coating, screencoating and gravure coating methods. Drying is conducted under thedrying conditions, for example, the drying temperature within a rangefrom 80 to 150° C. and the drying time within a range from 0.5 to 5minutes. The pressure-sensitive adhesive layer 2 may also be formed byapplying a pressure-sensitive adhesive composition on a separator toform a coated film and drying the coated film under the dryingconditions. Then, the pressure-sensitive adhesive layer 2 is laminatedon the base material 1 together with the separator. Thus, the dicingfilm 11 is produced.

The die bond films 3, 3′ are produced, for example, by the followingprocedure.

First, an adhesive composition solution as a material for forming thedicing die bond films 3, 3′ is produced. As described above, theadhesive composition solution is blended with the adhesive composition,the conductive particles, and various additives.

Next, the adhesive composition solution is applied on a substrateseparator to form a coated film having a predetermined thickness and thecoated film is dried under predetermined conditions to form an adhesivelayer. Examples of the application method include, but are not limitedto, roll coating, screen coating and gravure coating methods. Drying isconducted under the drying conditions, for example, the dryingtemperature within a range from 70 to 160° C. and the drying time withina range from 1 to 5 minutes. An adhesive layer may also be formed byapplying a pressure-sensitive adhesive composition solution on aseparator to form a coated film and drying the coated film under thedrying conditions. On the substrate separator, the adhesive layer islayered together with a separator.

Subsequently, each separator is peeled from the dicing film 11 and theadhesive layer and both are laminated to each other so that the adhesivelayer and the pressure-sensitive adhesive layer serve as a laminatingsurface. Lamination is conducted, for example, by contact bonding. Atthis time, the lamination temperature is not particularly limited andis, for example, preferably from 30 to 50° C., and more preferably from35 to 45° C. The linear pressure is not particularly limited and is, forexample, from 0.1 to 20 kgf/cm, and more preferably from 1 to 10 kgf/cm.Then, the substrate separator on the adhesive layer is peeled to obtainthe dicing die bond film according to the present embodiment.

(Method of Manufacturing Semiconductor Device)

Next, a method of manufacturing a semiconductor device using the dicingdie bond film 12 is explained by referring to FIGS. 3 to 6.

FIGS. 3 to 6 are schematic sectional views for explaining one method ofmanufacturing a semiconductor device according to the presentembodiment. First, as shown in FIG. 3, a pre-treatment is performed offorming a modified region on a scheduled dividing line 4L of asemiconductor wafer 4 by irradiating the semiconductor wafer 4 with alaser beam (a pre-treatment step). The present method is a method offorming a reformed region inside the semiconductor wafer by ablationcaused by multi-photon absorption by focusing condensing points on theinside of the semiconductor wafer and irradiating the semiconductorwater with a laser beam along the lattice-shaped scheduled dividinglines. A semiconductor wafer having a thickness of 1 to 500 μm can beused, for example. The irradiation conditions of the laser beam areappropriately adjusted within the following ranges.

<Laser Beam Irradiation Conditions> (A) Laser Beam

Laser Beam Source Semiconductor laser excitation Nd:YAG laser

Wavelength 1064 nm

Sectional Area of Laser Spot 3.14×10⁻⁸ cm²Laser Oscillation Form Q switch pulseRepetition Frequency 100 kHz or lessPulse Width 1 μs or lessOutput 1 mJ or less

Quality of Laser Beam TEM00

Polarization Characteristic Linear polarization

(B) Beam Collecting Lens

Magnification 100 times or less

NA 0.55

Transmittance to Laser Beam Wavelength 100% or less(C) Movement Speed of the Stage on which Semiconductor Substrate isLoaded 280 mm/sec or LessA detailed explanation of the method of forming a reformed region on thescheduled dividing lines 4L by irradiating the semiconductor wafer witha laser beam is omitted because it is specifically described in JapanesePatent No. 3408805 and Japanese Patent Application Laid-Open No.2003-338567.

Next, as shown in FIG. 4, the semiconductor wafer 4 subjected to thepre-treatment is pressure-bonded onto the die bond film 3′ of the dicingdie bond film 12, and the laminate fixed by adhering and holding (amounting step). This step is performed while pressing the wafer with apressing means such as a press bonding roll. The bonding temperatureduring mounting is not especially limited, however, it is preferably inthe range of 40 to 80° C. This is because warping of the semiconductorwafer 4 can be effectively prevented and the influence of expansion andcontraction of the dicing die bond film can be reduced.

Next, the semiconductor chip 5 is formed by applying a tensile force tothe dicing die bond film 12 and breaking the semiconductor wafer 4 andthe die bond film 3′ (the expanding step). In this step, a waferexpander on the market can be used, for example. Specifically, a dicingring 31 is bonded onto the peripheral part of a pressure-sensitiveadhesive layer 2 of the dicing die bond film 12 on which thesemiconductor wafer 4 is bonded, and then it is fixed onto a waferexpander 32 as shown in FIG. 5A. Next, a tensile force is applied to thedicing die bond film 12 by raising a push-up part 33 as shown in FIG.5B.

The expansion speed (the rising speed of the push-up part) is preferably1 to 400 mm/sec, and more preferably 50 to 400 mm/sec. With theexpansion speed being 1 mm/sec or more, the semiconductor wafer 4 andthe die bond film 3′ can be nearly simultaneously and easily broken.With the expansion speed being 400 mm/sec or less, the dicing film 11can be prevented from being broken.

The expansion amount (the amount of raise of the push-up part) ispreferably 5 to 50 mm, more preferably 5 to 40 mm, and especiallypreferably 5 to 30 mm. With the expansion amount being 5 mm or more,breakage of the semiconductor wafer 4 and the die bond film 3 can bemade easy. With the expansion amount being 50 mm or less, the dicingfilm 11 can be prevented from being broken.

The expansion temperature may be adjusted within −50 to 100° C. asnecessary. However, it is preferably −20 to 30° C. and more preferably−10 to 25° C. in the present invention. A lower expansion temperature ispreferable in respect of preventing the lowering of the yield due toinsufficient breakage of the die bond film, because when the temperatureis low, the breaking expansion is small and the die bond film can beeasily broken.

As described above, cracks can be generated in the thickness directionof the semiconductor wafer 4 with the reformed region of thesemiconductor wafer 4 as a starting point, the die bond film 3′ that isclosely attached to the semiconductor wafer 4 can be broken by applyinga tensile force to the dicing die bond film 12, and the semiconductorchip 5 with the die bond film 3′ can be obtained. Especially because thetensile storage modulus of the die bond film 3′ at −20° C. beforethermal curing is 0.1 to 10 GPa, generation of chipping upon breakingthe semiconductor wafer 4 at the modified region can be prevented.

Next, pickup of the semiconductor chip 5 is performed to peel off thesemiconductor chip 5 that is adhered and fixed onto the dicing die bondfilm 12 (the pickup step). The method of picking up is not particularlylimited, and conventionally known various methods can be adopted.Examples include a method of pushing up the individual semiconductorchip 5 from the dicing die-bonding 10 side with a needle and picking upthe pushed semiconductor chip 5 with a picking-up apparatus. Because thetensile storage modulus of the die bond film 3′ at −20° C. beforethermal curing is 0.1 to 10 GPa, chip fly and positional deviation ofthe semiconductor chip 5 upon picking up the semiconductor chip 5 can beprevented.

As pickup conditions, the needle pushing speed is preferably 5 to 100mm/sec, and more preferably 5 to 10 mm/sec. By making the needlepunching speed 5 mm/sec or more, the electrostatic discharging amount isprevented from becoming large, and by making the needle punching speed100 mm/sec or less, the electrification amount is prevented frombecoming large.

Peeling electrification occurs during pickup when the semiconductor chip5 with the die bond film 3 is peeled from the dicing film 11. However,the dicing die bond film 12 according to the present embodiment isrelatively hard to cause peeling electrification because the volumeresistivity is 1×10⁻³/cm or less. As a result, breakage of thesemiconductor chip 5 due to the generated static electricity can beprevented, and the reliability of the semiconductor chip 5 can beimproved.

Here, the picking up is performed after radiating the pressure-sensitiveadhesive layer 2 with ultraviolet rays because the pressure-sensitiveadhesive layer 2 is an ultraviolet curable type pressure-sensitiveadhesive layer. Accordingly, the adhesive strength of thepressure-sensitive adhesive layer 2 to the die bond film 3 a decreases,and the peeling of the semiconductor chip 5 becomes easy. As a result,picking up becomes possible without damaging the semiconductor chip 5.The condition such as irradiation intensity and irradiation time whenirradiating an ultraviolet ray is not particularly limited, and it maybe appropriately set depending on necessity. Further, the light sourceas described above can be used as a light source used in the ultravioletirradiation.

Next, as shown in FIG. 6, the picked up semiconductor chip 5 istemporarily fixed to an adherend 6 with the die bond film 3′ interposedtherebetween (a fixing step). Examples of the adherend 6 include such asa lead frame, a TAB film, a substrate, and a semiconductor chipseparately produced. The adherend 6 may be a deformable adherend thatare easily deformed, or may be a non-deformable adherend (asemiconductor wafer, etc.) that is difficult to deform, for example.

A conventionally known substrate can be used as the substrate. Further,a metal lead frame such as a Cu lead frame and a 42 Alloy lead frame andan organic substrate composed of glass epoxy, BT(bismaleimide-triazine), and polyimide can be used as the lead frame.However, the present invention is not limited to this, and includes acircuit substrate that can be used by mounting a semiconductor elementand electrically connecting with the semiconductor element.

The shear adhering strength to the adherend 6 at 25° C. during thetemporary fixing of the die bond film 3′ is preferably 0.2 MPa or more,and more preferably 0.2 to 10 MPa. When the shear adhering strength ofthe die bond film 3 is at least 0.2 MPa, shear deformation rarely occursat the adhering surface between the die bond film 3 and thesemiconductor chip 5 or the adherend 6 during the wire bonding step dueto ultrasonic vibration and heating in this step. That is, thesemiconductor element rarely moves due to the ultrasonic vibrationduring the wire bonding, and with this, the success rate of the wirebonding can be prevented from decreasing. The shear adhering strength tothe adherend 6 at 175° C. during the temporary fixing of the die bondfilm 3′ is preferably 0.01 MPa or more, and more preferably 0.01 to 5MPa.

Next, wire bonding is performed to electrically connect a tip of aterminal part (inner lead) of the adherend 6 and an electrode pad (notshown) on the semiconductor chip 5 with a bonding wire 7 (the wirebonding step). The bonding wires 7 may be, for example, gold wires,aluminum wires, or copper wires. The temperature when the wire bondingis performed is from 80 to 250° C., preferably from 80 to 220° C. Theheating time is from several seconds to several minutes. The connectionof the wires is performed by using a combination of vibration energybased on ultrasonic waves with compression energy based on theapplication of pressure in the state that the wires are heated to atemperature in the above-mentioned range. The present step can beconducted without thermal setting of the die bond film 3 a. In theprocess of the step, the semiconductor chip 5 and the adherend 6 are notfixed to each other by the die bond film 3 a.

Next, the semiconductor chip 5 is sealed with the sealing resin 8 (thesealing step). The present step is performed by molding the sealingresin with a mold or die. The sealing resin 8 may be, for example, anepoxy resin. The heating for the resin-sealing is performed usually at175° C. for 60 to 90 seconds. In the this invention, however, theheating is not limited to this, and may be performed, for example at 165to 185° C. for several minutes. In such a way, the sealing resin iscured and further the semiconductor chip 5 and the adherend 6 are set toeach other through the adhesive sheet 3 a. In short, even if the belowmentioned post-curing step, which will be detailed later, is notperformed in this invention, the sticking/fixing based on the adhesivesheet 3 a can be attained in the present step so that the number of theproducing steps can be reduced and the term for producing thesemiconductor device can be shortened.

In the post-curing step, the sealing resin 8, which is not sufficientlycured in the sealing step, is completely cured. Even if the die bondfilm 3 a is not completely cured in the step of sealing, the die bondfilm 3 a and sealing resin 8 can be completely cured in the presentstep. The heating temperature in the present step is varied dependentlyon the kind of the sealing resin, and is, for example, in the range of165 to 185° C. The heating time is from about 0.5 to 8 hours.

The case of temporarily fixing the semiconductor chip 5 with the diebond film 3′ to the adherend 6 and then performing the wire bonding stepwithout completely thermally curing the die bond film 3′ is explained inthe above-described embodiment. However, a normal die bonding step oftemporarily fixing the semiconductor chip 5 with the die bond film 3′ tothe adherend 6, thermally curing the die bond film 3′, and thenperforming the wire bonding step may be performed in the presentinvention. In this case, the die bond film 3′ after the thermal settingpreferably has a shear adhering strength at 175° C. of 0.01 MPa or more,and more preferably 0.01 to 5 MPa. With the shear adhering strength at175° C. after the thermal setting being 0.01 MPa or more, the sheardeformation at the adhering surface between the die bond film 3′ and thesemiconductor chip 5 or the adherend 6 due to ultrasonic vibration andheating during the wire bonding step can be prevented from occurring.

The dicing die bond film of the present invention can be suitably usedwhen laminating a plurality of semiconductor chips to carry outthree-dimensional mounting. At this time, a die bond film and a spacermay be laminated between the semiconductor chips, or only a die bondfilm may be laminated between semiconductor chips without laminating aspacer. The mode of mounting can be appropriately changed according tothe manufacturing condition and the use.

Another method of manufacturing a semiconductor device using the dicingdie bond film 12 is explained referring to FIGS. 7A to 7C and FIG. 8.

FIGS. 7 and 8 are schematic sectional views for explaining anothermethod of manufacturing a semiconductor device according to the presentembodiment. First, a groove 4S that does not reach backside 4R is formedon a surface 4F of the semiconductor wafer 4 with a rotary blade 41 asshown in FIG. 7A. The semiconductor wafer 4 is supported by a supportingbase that is not shown during the formation of the groove 4S. The depthof the groove 4S can be appropriately set depending on the thickness ofthe semiconductor wafer 4 and the expansion condition.

As shown in FIG. 7B, a protective member 42 is made to support thesemiconductor wafer 4 so that a surface 4F comes into contact with theprotective member 42. The protective member 42 has a ring-shaped frame43 having an opening in the center and a protective tape 44 that ispasted to the backside of the frame 43 and that covers the opening ofthe frame 43, and the protective tape 44 supports the semiconductorwafer 4 with its adhesive power.

The support base that is used during the formation of grooves 4S ispeeled. After that, as shown in FIG. 7C, the grooves 4S are exposed fromthe backside 4R by performing backside grinding with a grinding stone (agroove exposing step). Then, the dicing die bond film 12 is pasted tothe surface 4F of the semiconductor wafer 4 where the grooves 4S areexposed (a pasting step). A conventionally known tape pasting apparatuscan be used for pasting the protective tape 44 and the dicing die bondfilm 12 to the semiconductor wafer 4, and a conventionally knowngrinding apparatus can be used for the backside grinding.

As shown in FIG. 8, the semiconductor wafer 4 with the exposed grooves4S is pressure-bonded onto the die bond film 3′ of the dicing die bondfilm 12 and the laminate is fixed by adhering and holding (a mountingstep). After that, the protective sheet 34 is peeled, and an expandingstep is performed. The expanding step can be performed in the samemanner as in the case where the modified region is formed on thescheduled dividing line 4L by irradiation with a laser beam.

By applying a tensile force to the dicing die bond film 12, the die bondfilm 3′ can be broken at the position that corresponds to the grooves4S, and the semiconductor chip 5 with the die bond film 3′ can beobtained.

Explanation of the subsequent steps is omitted because they are the sameas the case where the modified region is formed on the scheduleddividing line 4L by irradiation with a laser beam.

The method of dicing a semiconductor wafer in the present invention isnot limited to the above-described embodiment, and a so-called full cutcutting method may be adopted in which cutting is performed into thedicing die bond film 10 by a blade. The dicing die bond film of thepresent invention can be used also in the method of manufacturing asemiconductor device by a full cut method.

EXAMPLES

Below, preferred examples of the present invention are explained indetail. However, materials, addition amounts, and the like described inthese examples are not intended to limit the scope of the presentinvention, and are only examples for explanation as long as there is nodescription of limitation in particular. In the following, “part (s)”means “part (s) by weight.”

Example 1

An adhesive composition solution having a concentration of 23% by weightwas obtained by dissolving the following (a) to (g) inmethylethylketone.

(a) 100 parts of an acrylic ester polymer containing ethylacrylate-methyl methacrylate as a main component (Paracron W-197CMmanufactured by Negami Chemical Industries Co., Ltd.)

(b) 228 parts of an epoxy resin 1 (Epicoat 1004 manufactured by JapanEpoxy Resin Co., Ltd.)

(c) 206 parts of an epoxy resin 2 (Epicoat 827 manufactured by JapanEpoxy Resin Co., Ltd.)

(d) 466 parts of a phenol resin (Milex XLC-4L manufactured by MitsuiChemicals, Inc.)

(e) 400 parts of a spherical copper powder 1 (SF-Cu manufactured byNippon Atomized Metal Powder Corporation, average particle size 10 μm)

(f) 267 parts of a spherical copper powder 2 (SF-Cu manufactured byNippon Atomized Metal Powder Corporation, average particle size 6 μm)

(g) 3 parts of a curing catalyst (C11-Z manufactured by ShikokuChemicals Corporation)

A die bond film A having a thickness of 20 μm was produced by applyingthis adhesive composition solution onto a releasing treatment film (apeeling liner) made of a polyethylene terephthalate film and having athickness of 38 μm subjected to a silicone releasing treatment anddrying the film at 130° C. for 2 minutes.

Example 2

In Example 2, a die bond film B according to the present example wasproduced in the same manner as in Example 1 except the spherical copperpowder 1 of (e) and the spherical copper powder 2 of (f) were changed to367 parts of a spherical silver powder 1 (SFR-AG manufactured byTokuriki Chemical Research Co., Ltd., average particle size 5 μm) and300 parts of a spherical silver powder 2 (AgC-156I manufactured byFukuda Metal Foil & Powder Co., Ltd., average particle size 3 μm).

Example 3

In Example 3, a die bond film C according to the present example wasproduced in the same manner as in Example 1 except the spherical copperpowder 1 of (e) and the spherical copper powder 2 of (f) were changed to2502 parts of a spherical copper powder 1 (Cu-HWQ manufactured by FukudaMetal Foil & Powder Co., Ltd., average particle size 5 μm) and 1500parts of a spherical copper powder 2 (Cu-HWQ manufactured by FukudaMetal Foil & Powder Co., Ltd., average particle size 1.5 μm).

Comparative Example 1

In Comparative Example 1, a die bond film D according to the presentexample was produced in the same manner as in Example 1 except thespherical copper powder 1 of (e) was changed to 667 parts of a sphericalcopper powder (SF-Cu manufactured by Nippon Atomized Metal PowderCorporation, average particle size 6 μm) and the spherical copper powder2 of (f) was not added.

Comparative Example 2

In Comparative Example 2, a die bond film E according to the presentexample was produced in the same manner as in Example 1 except the addedamount of the spherical copper powder 1 of (e) was changed to 61 partsand the added amount of the spherical copper powder 2 of (f) was changedto 50 parts.

Comparative Example 3

In Comparative Example 3, a die bond film F according to the presentexample was produced in the same manner as in Example 1 except the addedamount of the spherical copper powder 1 of (e) was changed to 5004 partsand the added amount of the spherical copper powder 2 of (f) was changedto 4000 parts.

(Measurement of Volume Resistivity)

The measurement of the volume resistivity was performed on the die bondfilms A to F by a four-point probe method according to JIS K 7194 usinga resistivity meter (Loresta MP MCP-T350 manufactured by MitsubishiChemical Corporation). The result is shown in Table 1.

(Measurement of Peeling Electrification Amount)

Dicing die bond films A to F were formed by pasting a dicing film toeach of the die bond films A to F. A dicing film (DU-400SE manufacturedby Nitto Denko Corporation) was used, which is a laminate in which apressure-sensitive adhesive layer (an acrylic pressure-sensitiveadhesive layer having a thickness of 5 μm) is laminated on a base (apolyolefin film having a thickness of 100 μm). Then, a silicon waferhaving a thickness of 75 μm was pasted to each of the dicing die bondfilms A to F at 40° C., and dicing was performed so that the size of thediced pieces became 5 mm×5 mm under the following conditions. Thesemiconductor chip was picked up, and the chip electrification amountright after peeling was measured using an electrification amountmeasurement apparatus (ELECTROSTATIC VOLTMETER MODEL 520 manufactured byTREK, Inc.) Specifically, 10 measurements were performed in anatmosphere of room temperature (25° C.) and a humidity of 50%, and theaverage value was calculated as the electrification amount. As a resultof the measurement, an electrification amount was evaluated as ◯ when itwas 1.0 kV or less, and x when it exceeded 1.0 kV. The result of themeasurement and the evaluation are shown in Table 1. The pickupconditions were as follows.

<Dicing Conditions>

Dicing apparatus: DISCO DFD-6361 manufactured by DISCO Corporation

Dicing speed: 50 mm/sec

Dicing blade:

-   -   Z1; NBC-ZH203O-SE27HDD manufactured by DISCO Corporation    -   Z2; NBC-ZH103O-SE27HBB manufactured by DISCO Corporation

Dicing blade rotation speed:

-   -   Z1; 40,000 rpm    -   Z2; 45,000 rpm

Cutting method: step cut

Dicing tape cut depth: 20 μm

Chip size: 5 mm×5 mm

<Pickup Conditions>

Pickup apparatus: SPA-300 manufactured by Shinkawa Ltd.

Number of needles: 5 needles

Needle pushing speed: 10 mm/sec

Expand: pulling down distance: 3 mm

Needle pushing distance: 400 μm

(Measurement of Tensile Storage Modulus at −20° C. Before ThermalCuring)

The die bond films A to F were cut into rectangular measurement piecesof 200 μm thick and 10 mm wide. The tensile storage modulus at −50 to300° C. was measured under conditions of a frequency of 1 Hz and atemperature rise rate of 10° C./min using a solid viscoelasticitymeasurement apparatus (RSA III manufactured by Rheometric Scientific FE,Ltd.). The measured values at −20° C. are shown in Table 1.

(Measurement of Tensile Storage Modulus at 175° C. after Thermal Curing)

A heat treatment was performed on the die bond films A to F for 1 hourunder a condition of 120° C. After that, the die bond films A to F werecut into rectangular measurement pieces 200 μm thick and 10 mm wide. Thetensile storage modulus at −50 to 300° C. was measured under conditionsof a frequency of 1 Hz and a temperature rise rate of 10° C./min using asolid viscoelasticity measurement apparatus (RSA III manufactured byRheometric Scientific FE, Ltd.). The measured values at 175° C. areshown in Table 1.

(Confirmation of Breakage)

<Case in which a Step (Step 1) was Adopted in which a Reformed Regionwas Formed on the Scheduled Dividing Lines by Irradiating theSemiconductor Wafer with a Laser Beam>

A reformed region was formed in the interior of the semiconductor waferby focusing condensing points in the interior of the semiconductor waferand irradiating the semiconductor wafer with a laser beam at the surfaceof the semiconductor wafer along the lattice-shaped (10 mm×10 mm)scheduled dividing lines using ML300-Integration manufactured by TokyoSeimitsu Co., Ltd. as a laser beam machining apparatus. A silicon wafer(thickness: 75 μm, outer diameter: 12 inches) was used as thesemiconductor wafer. The irradiation conditions of the laser beam wereas follows.

<Laser Beam Irradiation Conditions> (A) Laser Beam

Laser Beam Source Semiconductor laser excitation Nd:YAG laser Wavelength1064 nmSectional Area of Laser Spot 3.14×10⁻⁸ cm²Laser Oscillation Form Q switch pulse

Repetition Frequency 100 kHz Pulse Width 30 ns Output 20 μJ/pulseQuality of Laser Beam TEM00 40

Polarization Characteristic Linear polarization

(B) Beam Collecting Lens

Magnification 50 times

NA 0.55 Transmittance to Laser Beam Wavelength 60%

(C) Movement Speed of the Stage on which Semiconductor Substrate isLoaded 100 mm/sec

A breaking test was performed on each of the die bond films A to F afterbonding the semiconductor wafer on which the pretreatment by a laserbeam was performed. The conditions of expansion in the breaking testwere room temperature (25° C.) an expansion speed of 300 mm/sec., and anexpansion amount of 30 mm. As a result of the breaking test, the case inwhich there was no occurrence of insufficient breakage is regarded asgood, and the case in which there were places of insufficient breakageis regarded as poor. The result is shown in Table 1.

<Case in which a Step (Step 2) was Adopted in which Grooves were Formedon the Surface of the Semiconductor Wafer and then Backside Grinding wasPerformed>

Lattice-shaped (10 mm×10 mm) cut grooves were formed on thesemiconductor wafer (thickness 500 μm) by blade dicing. The depth of thecut grooves was 100 μm.

Next, divided individual semiconductor chips (10 mm×10 mm×75 μm) wereobtained by protecting the surface of the semiconductor wafer with aprotecting tape and performing backside grinding until the thicknessreached 75 μm. This semiconductor chip was bonded onto each of the diebond films A to F, and then the breaking test was performed. Theconditions of expansion in the breaking test were room temperature (25°C.), an expansion speed of 300 mm/sec, and an expansion amount of 30 mm.As a result of the breaking test, the case in which there was nooccurrence of insufficient breakage is regarded as good, and the case inwhich there were places of insufficient breakage is regarded as poor,similarly to the case of step 1. The result is shown in Table 1.

(Moisture Absorption Reliability)

Each of the die bond films A to F was pasted onto a semiconductor chipof 5 mm square under a condition of 40° C., and the resultant wasmounted to a BGA (Ball Grid Array) substrate under conditions of 120°C., 0.1 MPa, and 1 second. For each of the die bond films A to F, 9pieces of the samples were prepared. A heat treatment was performed onthe sample for 10 hours at 100° C., and the sample was sealed using asealing resin (GE-100 manufactured by Nitto Denko Corporation). Then,the sample was left under an atmosphere of 60° C. and 80% RH for 168hours. After that, the sample was passed through an IR reflow furnacewhose temperature was set to maintain a temperature of 260° C. or morefor 30 seconds, and whether any peeling is generated at the interfacebetween the semiconductor chip and the BGA substrate or not was observedwith an ultrasonic microscope. As a result of the observation, thesamples were evaluated as ◯ when the number of samples in which peelingoccurred was 3 or less and x when the number was 4 or more. The resultis shown in Table 1.

TABLE 1 VOLUME ELECTRIFICATION MODULUS BEFORE MODULUS AFTER BREAKINGMOISTURE RESISTIVITY AMOUNT THERMAL CURING THERMAL CURING PROPERTYABSORPTION (×10⁻³ Ω · cm) (V) (GPa) (GPa) STEP 1 STEP 2 RELIABILITYExample 1 0.31 ∘ 5.53 24 ∘ ∘ ∘ Example 2 0.06 ∘ 4.41 18.8 ∘ ∘ ∘ Example3 0.027 ∘ 7.95 31 ∘ ∘ ∘ Comparative 24 ∘ 4.6 17.4 ∘ ∘ ∘ Example 1Comparative 98 x 0.89 0.09 x ∘ x Example 2 Comparative 0.011 ∘ 11.3 35 xx ∘ Example 3

1. A dicing die bond film comprising a dicing film and a thermosettingtype die bond film provided thereon, wherein the thermosetting type diebond film contains conductive particles, the volume resistivity of thethermosetting type die bond film is 1×10⁻⁶ Ω·cm or more and 1×10⁻³ Ω·cmor less, and the tensile storage modulus of the thermosetting type diebond film at −20° C. before thermal curing is 0.1 to 10 GPa.
 2. Thedicing die bond film according to claim 1, wherein the conductiveparticles are two kinds or more of conductive particles having differentaverage particle sizes, and each kind of the conductive particles has anaverage particle size of 0.01 μm or more and 10 μm or less.
 3. Thedicing die bond film according to claim 1, wherein the content of theconductive particles is 20 to 90 parts by weight relative to 100 partsby weight of an organic component of the thermosetting type die bondfilm.
 4. The dicing die bond film according to claim 1, wherein asemiconductor chip with a die bond film is formed by forming a modifiedregion on a semiconductor wafer by irradiating the semiconductor waferwith a laser beam, pasting the semiconductor wafer to the dicing diebond film, and breaking the semiconductor wafer at the modified regionand simultaneously breaking the thermosetting type die bond film thatconfigures the dicing die bond film at a position that corresponds tothe modified region by applying a tensile force to the dicing die bondfilm, the obtained semiconductor chip with the die bond film is peeledfrom the dicing film, and the peeled semiconductor chip with the diebond film is used in a method of fixing the peeled semiconductor chipwith the die bond film to an adherend with the die bond film interposedtherebetween.
 5. The dicing die bond film according to claim 1, whereina semiconductor chip with a die bond film is formed by forming grooveson a surface of a semiconductor wafer, exposing the grooves byperforming backside grinding, pasting the dicing die bond film to thesurface of the semiconductor wafer where the grooves are exposed, andbreaking the thermosetting type die bond film that configures the dicingdie bond film at a position that corresponds to the grooves by applyinga tensile force to the dicing die bond film, the obtained semiconductorchip with the die bond film is peeled from the dicing film, and thepeeled semiconductor chip with the die bond film is used in a method offixing the peeled semiconductor chip to an adherend with the die bondfilm interposed therebetween.
 6. The dicing die bond film according toclaim 1, wherein the conductive particles are of at least one kindselected from the group consisting of nickel particles, copperparticles, silver particles, aluminum particles, gold particles,stainless steel particles, carbon black, carbon nanotubes, metalparticles obtained by plating a surface of a metal with another metal,and resin particles of which surface is coated with a metal.
 7. Thedicing die bond film according to claim 1 wherein the thermosetting typedie bond film contains an acrylic resin as a thermoplastic resin.
 8. Amethod of forming a semiconductor chip, comprising providing the dicingdie bond film according to claim 1; providing a semiconductor wafer onwhich a modified region has been formed by irradiating the semiconductorwafer with a laser beam; pasting the semiconductor wafer to the dicingdie bond film; and breaking the semiconductor wafer at the modifiedregion and simultaneously breaking the thermosetting type die bond filmthat configures the dicing die bond film at a position that correspondsto the modified region by applying a tensile force to the dicing diebond film.
 9. The method of claim 8, further comprising peeling theobtained semiconductor chip with the die bond film from the dicing film.10. The method of claim 9, further comprising fixing the peeledsemiconductor chip with the die bond film to an adherend with the diebond film interposed therebetween.
 11. A method of forming asemiconductor chip, comprising providing the dicing die bond filmaccording to claim 1; providing a semiconductor wafer, the surface ofwhich has been modified by forming thereon and then exposing the groovesby performing backside grinding; pasting the semiconductor wafer to thedicing die bond film; and breaking the thermosetting type die bond filmthat configures the dicing die bond film at a position that correspondsto the grooves by applying a tensile force to the dicing die bond film.12. The method of claim 11, further comprising peeling the obtainedsemiconductor chip with the die bond film from the dicing film.
 13. Themethod of claim 12, further comprising fixing the peeled semiconductorchip with the die bond film to an adherend with the die bond filminterposed therebetween.
 14. A semiconductor chip prepared according tothe method of claim
 8. 15. A semiconductor chip prepared according tothe method of claim 11.